Description
This project aims to clarify the influence of polytype on irradiation-induced damage buildup and recovery mechanisms through a comparative study of 4H-SiC and 6H-SiC under identical implantation and annealing conditions. Samples will be irradiated at room temperature with 300 keV argon ions at fluences ranging from $1 \times 10^{13}$ to $1 \times 10^{15}$ ions/cm$^{2}$, with implantation conditions chosen based on SRIM simulations and a literature review. Post-implantation annealing will be performed at selected temperatures up to 1000 $^\circ$C. Both annealed and non-annealed samples will be characterized using X-ray diffraction (XRD) and Rutherford backscattering spectroscopy in channeling mode (RBS/C). Strain and disorder depth distributions will be extracted from MROX simulations, enabling a direct comparison between simulated and experimental results. Preliminary measurements on non-irradiated samples confirm the high crystalline quality and structural consistency of the initial 4H-SiC samples.
| Field of Research/Work | Condensed Matter and Materials |
|---|
