Description
The recent observation of ferroelectricity in group III-nitride semiconductors containing rare earth, such as AlScN and AlYN, has opened the doors to a new generation of electronic devices. However, a few obstacles remain, such as the growth of quality crystals with the ferroelectric property and mitigating the leakage currents associated with nitrogen vacancies. In this work, the crystal quality and structure of AlScN and AlYN samples will be characterized with x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Furthermore, for the first time, these samples were implanted with nitrogen ions, in an effort to reduce the leakage currents. The implanted samples are subsequently thermally annealed and characterized by the same techniques. Preliminary results on the implantation and structural characterization of two samples will be presented.
| Field of Research/Work | Condensed Matter and Materials |
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