Description
Gallium oxide (Ga₂O₃) is an ultra-wide bandgap semiconductor with strong potential for solar-blind UV photodetection. In this work, the growth of Sn-doped Ga₂O₃ thin films is investigated to optimize their use as channel layers for enhancement-mode, bottom-gate bottom-contact thin-film (BGBC) field-effect transistors (FETs) aimed at UV sensing applications. Thin films are deposited primarily by RF magnetron co-sputtering under varying growth conditions to control conductivity, with ion implantation explored as an alternative doping method. The influence of different substrates and post-deposition annealing on the structural, optical, and electrical properties of the films is evaluated. Characterization is performed using profilometry, Rutherford Backscattering Spectrometry, X-ray diffraction, scanning electron microscopy, optical absorbance, and electrical measurements. The most promising films will be integrated into pre-fabricated FET templates and assessed for transistor operation and UV detection performance. This work seeks to establish optimized growth and doping conditions for scalable Ga₂O₃-based solar-blind UV FET devices.
| Field of Research/Work | Condensed Matter and Materials |
|---|
